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AO5404E N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5404E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. -RoHS compliant
Features
VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS(ON) < 0.55 (VGS = 4.5V) RDS(ON) < 0.68 (VGS = 2.5V) RDS(ON) < 0.80 (VGS = 1.8V)
ESD PROTECTED!
SC89-3L
D
D1
G
S1
S
G1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol 10 Sec VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A, F Pulsed Drain Current B TA=25C Power Dissipation
A
Steady State
20 8 0.5 0.45 3 0.28 0.18 -55 to 150
Units V V A
VGS TA=25C TA=70C ID IDM TA=70C PD TJ, TSTG 0.38 0.24 0.5 0.5
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
C A A
Symbol
t 10s Steady-State Steady-State
RJA RJL
Typ 275 360 300
Max 330 450 350
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5404E
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=4.5V VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=0.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=0.5A VGS=1.8V, ID=0.3A gFS VSD IS Forward Transconductance VDS=5V, ID=0.5A Diode Forward Voltage IS=0.1A,VGS=0V Maximum Body-Diode Continuous Current 0.45 3 0.395 0.6 0.479 0.578 1.5 0.65 1 0.4 35 VGS=0V, VDS=10V, f=1MHz 8 6 0.63 VGS=4.5V, VDS=10V, ID=0.5A 0.08 0.16 4.5 VGS=5V, VDS=10V, RL=50, RGEN=3 IF=0.5A, dI/dt=100A/s 3.3 78 32 8 2 10 1 45 0.55 0.85 0.68 0.8 0.6 Min 20 1 5 1 100 1 Typ Max Units V A A V A S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. 0.5 B: Repetitive rating, pulse width limited by junction temperature. 0.45 C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve 0.28 provides a single pulse rating. 0.18 F. The maximum current rating is limited by bond-wires Rev0: Jan, 08
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5404E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3 4.5V 3.5V 2 ID (A) 2V ID(A) 1 2.5V 1.5 25C 2 VDS=5V
125C
Vgs=1.5V 1
0.5 1V 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1.8 0.8 Normalized On-Resistance 0.7 RDS(ON) () 0.6 VGS=2.5V 0.5 0.4 0.3 0.2 0 0.2 0.4 0.6 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=2.5V ID=0.5A VGS=1.8V VGS=4.5V ID=0.5A VGS=1.8V ID=-0.3A 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics
1 ID=0.5A 0.8 125C RDS(ON) () IS (A) 0.6 0.4 25C 0.2 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0
0.5 0.45 0.28 125C 0.18
25C
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5404E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 5 10 15 20 VDS=10V ID=0.5A Capacitance (pF) Ciss 40 60
20 Coss
0
VDS (Volts) Figure 8: Capacitance Characteristics
10.0
14
10s
Power (W) 1.0 ID (Amps)
12 10
TJ(Max)=150C TA=25C
RDS(ON) limited 100 1ms 10ms 1s 10s
10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100
8 6 4 2 0 0.0001
0.1
DC TJ(Max)=150C TA=25C
0.1 1
0.1s
0.0
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=450C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.5 0.45 0.28 0.18
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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